www.irf.com 1 08/25/06 IRF6662PBF irf6662trpbf directfet ? power mosfet directfet ? isometric mz applicable directfet outline and substrate outline (see p.7,8 for details) fig 1. typical on-resistance vs. gate voltage typical values (unless otherwise specified) click on this section to link to the appropriate technical paper. click on this section to link to the directfet website. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 3.2mh, r g = 25 ? , i as = 4.9a. notes: sq sx st mq mx mt mz absolute maximum ratin g s parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i d @ t c = 25c continuous drain current, v gs @ 10v i dm pulsed drain current e as single pulse avalanche energy mj i ar avalanche current a 39 max. 6.6 47 66 20 100 8.3 4.9 fig 2. typical total gate charge vs. gate-to-source voltage 4 6 8 10 12 14 16 v gs, gate -to -source voltage (v) 0 20 40 60 80 100 t y p i c a l r d s ( o n ) ( m ? ) i d = 4.9a t j = 25c t j = 125c 0 5 10 15 20 25 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v v ds = 20v i d = 4.9a rohs compliant lead-free (qualified up to 260c reflow) application specific mosfets ideal for high performance isolated converter primary switch socket optimized for synchronous rectification low conduction losses high cdv/dt immunity low profile (<0.7mm) dual sided cooling compatible compatible with existing surface mount techniques description the IRF6662PBF combines the latest hexfet? power mosfet silicon technology with the advanced directfet tm packaging to achieve the lowest on-state resistance in a package that has the footprint of a so-8 and only 0.7 mm profile. the directfet package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection sol dering techniques. application note an-1035 is followed regarding the manufacturing methods and processes. the directfet package allow s dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. the IRF6662PBF is optimized for primary side bridge topologies in isolated dc-dc applications, for wide range universal input t elecom applications (36v - 75v), and for secondary side synchronous rectification in regulated dc-dc topologies. the reduced total los ses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system relia bility improvements, and makes this device ideal for high performance isolated dc-dc converters. d g s s d v dss v gs 100v max 20v max r ds(on) 17.5m ? @ 10v q g tot q gd q gs2 q rr q oss v gs(th) 22nc 6.8nc 1.2nc 50nc 11nc 3.9v pd - 97243a
IRF6662PBF 2 www.irf.com notes: s d g repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle 2%. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 100 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.10 ??? v/c r ds(on) static drain-to-source on-resistance ??? 17.5 22 m ? v gs(th) gate threshold voltage 3.0 3.9 4.9 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -9.7 ??? mv/c i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 11 ??? ??? s q g total gate charge ??? 22 31 q gs1 pre-vth gate-to-source charge ??? 4.9 ??? q gs2 post-vth gate-to-source charge ??? 1.2 ??? nc q gd gate-to-drain charge ??? 6.8 10 q godr gate charge overdrive ??? 9.1 ??? see fig. 15 q sw switch charge (q gs2 + q gd ) ??? 8.0 ??? q oss output charge ??? 11 ??? nc r g gate resistance ??? 1.2 ??? ? t d(on) turn-on delay time ??? 11 ??? t r rise time ??? 7.5 ??? t d(off) turn-off delay time ??? 24 ??? ns t f fall time ??? 5.9 ??? c iss input capacitance ??? 1360 ??? c oss output capacitance ??? 270 ??? pf c rss reverse transfer capacitance ??? 61 ??? c oss output capacitance ??? 1340 ??? c oss output capacitance ??? 160 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 2.5 (body diode) a i sm pulsed source current ??? ??? 66 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 34 51 ns q rr reverse recovery charge ??? 50 75 nc mosfet symbol r g =6.2 ? v ds = 25v conditions see fig. 17 v gs = 0v, v ds = 80v, f=1.0mhz v gs = 0v, v ds = 1.0v, f=1.0mhz v ds = 16v, v gs = 0v v dd = 50v, v gs = 10v v gs = 0v ? = 1.0mhz i d = 4.9a v ds = v gs , i d = 100a v ds = 100v, v gs = 0v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 8.2a t j = 25c, i f = 4.9a, v dd = 50v di/dt = 100a/s see fig. 18 t j = 25c, i s = 4.9a, v gs = 0v showing the integral reverse p-n junction diode. i d = 4.9a v ds = 80v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v v gs = 10v v ds = 10v, i d = 4.9a v ds = 50v
IRF6662PBF www.irf.com 3 fig 3. maximum effective transient thermal impedance, junction-to-ambient 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc ri (c/w) i (sec) 1.2801 0.000322 8.7256 0.164798 21.7500 2.2576 13.2511 69 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri a a 4 4 r 4 r 4 used double sided cooling , mounting pad. mounted on minimum footprint full size board with metalized back and with small clip heatsink. notes: r is measured at t j of approximately 90c. surface mounted on 1 in. square cu (still air). mounted to a pcb with small clip heatsink (still air) mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) absolute maximum ratin g s parameter units p d @t a = 25c power dissipation w p d @t a = 70c power dissipation p d @t c = 25c power dissipation t p peak soldering temperature c t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient ??? 45 r ja junction-to-ambient 12.5 ??? r ja junction-to-ambient 20 ??? c/w r jc junction-to-case ??? 1.4 r j-pcb junction-to-pcb mounted 1.0 ??? 270 -40 to + 150 max. 89 2.8 1.8
IRF6662PBF 4 www.irf.com fig 5. typical output characteristics fig 4. typical output characteristics fig 6. typical transfer characteristics fig 7. normalized on-resistance vs. temperature fig 8. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v bottom 6.0v 60s pulse width tj = 25c 6.0v 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 150c t j = 25c t j = -40c v ds = 10v 60s pulse width 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 t y p i c a l r d s ( o n ) ( n o r m a l i z e d ) v gs = 10v i d = 8.2a 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 6.0v 60s pulse width tj = 150c vgs top 15v 10v 8.0v 7.0v bottom 6.0v fig 9. typical on-resistance vs. drain current 0 10 20 30 40 50 60 i d , drain current (a) 15 20 25 30 35 40 45 t y p i c a l r d s ( o n ) ( m ? ) t j = 25c vgs = 7.0v vgs = 8.0v vgs = 10v vgs = 15v
IRF6662PBF www.irf.com 5 fig 13. typical threshold voltage vs. junction temperature fig 12. maximum drain current vs. ambient temperature fig 10. typical source-drain diode forward voltage fig11. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 0 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100sec 1msec 10msec 25 50 75 100 125 150 t a , ambient temperature (c) 0 2 4 6 8 10 i d , d r a i n c u r r e n t ( a ) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd , source-to-drain voltage (v) 0 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 2.0 3.0 4.0 5.0 6.0 7.0 t y p i c a l v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100a i d = 250a i d = 1.0ma i d = 1.0a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.6a 1.9a bottom 4.9a
IRF6662PBF 6 www.irf.com d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 15a. gate charge test circuit fig 15b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 16a. unclamped inductive test circuit fig 17b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 17a. switching time test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd v gs
IRF6662PBF www.irf.com 7 directfet ? substrate and pcb layout, mz outline (medium size can, z-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. fig 18. diode reverse recovery test circuit for n-channel hexfet ? power mosfets p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period * v gs = 5v for logic level devices * inductor current circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer ? di/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test + - + + + - - - r g v dd d.u.t
IRF6662PBF 8 www.irf.com directfet ? outline dimension, mz outline (medium size can, z-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. directfet ? part marking max 0.250 0.201 0.156 0.018 0.028 0.028 0.038 0.026 0.013 0.050 0.105 0.0274 0.0031 0.007 max 0.246 0.189 0.152 0.014 0.027 0.027 0.037 0.025 0.011 0.044 0.100 0.0235 0.0008 0.003 imperial code a b c d e f g h j k l m r p max 6.35 5.05 3.95 0.45 0.72 0.72 0.97 0.67 0.32 1.26 2.66 0.676 0.080 0.17 min 6.25 4.80 3.85 0.35 0.68 0.68 0.93 0.63 0.28 1.13 2.53 0.616 0.020 0.08 metric dimensions
IRF6662PBF www.irf.com 9 directfet ? tape & reel dimension (showing component orientation). data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/06 standard option (qty 4800) min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 metric imperial tr1 option (qty 1000) imperial min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c reel dimensions note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as irf6662trpbf). for 1000 parts on 7" reel, order irf6662tr1pbf min 7.90 3.90 11.90 5.45 5.10 6.50 1.50 1.50 code a b c d e f g h max 8.10 4.10 12.30 5.55 5.30 6.70 n.c 1.60 min 0.311 0.154 0.469 0.215 0.201 0.256 0.059 0.059 max 0.319 0.161 0.484 0.219 0.209 0.264 n.c 0.063 dimensions metric imperial loaded tape feed direction
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/
|
